Article ID Journal Published Year Pages File Type
9817726 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2005 5 Pages PDF
Abstract
We investigate the effect of the pre-amorphisation damage on the structural properties, and dopant diffusion behaviour of indium and carbon co-implanted layers in silicon. Ion implantation of indium and carbon in silicon was used to produce co-implanted specimens. Rutherford Backscattering Spectroscopy and Secondary Ion Mass Spectroscopy have been performed on as-implanted and annealed samples to assess in detail the structural properties of the doped layers and the diffusion behaviour. The results have been compared with data obtained for similar implants performed into crystalline silicon to achieve a deeper understanding of the mechanisms driving the diffusion of the indium in silicon in presence of co-implanted species. In particular a reduction of the indium diffusion and a saturation level for the indium substitutional retained dose were observed.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
, , , , ,