| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817732 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
In this paper we investigate using secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP) and Hall effect measurements, the alternate p-type dopant species of Ga and its behaviour in the energy range 2-5Â keV, implanted into both single crystal Si and pre-amorphised material.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R. Gwilliam, S. Gennaro, G. Claudio, B.J. Sealy, C. Mulcahy, S. Biswas,