Transient enhanced diffusion and deactivation of ion-implanted As in strained Si

Article ID	Journal	Published Year	Pages	File Type
9817734	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms	2005	5 Pages	PDF

Abstract

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

Keywords

81.15.Gh 61.72.Ji 61.72.Hh 61.72.Cc 61.72.Tt 83.85.St Arsenic Rapid thermal annealing Strain effects Transient enhanced diffusion Strained silicon Dopant activation

Related Topics

Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films

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Transient enhanced diffusion and deactivation of ion-implanted As in strained Si

Authors

G.D.M. Dilliway, A.J. Smith, J.J. Hamilton, J. Benson, Lu Xu, P.J. McNally, G. Cooke, H. Kheyrandish, N.E.B. Cowern,