| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817740 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30Â keV BF2+ or As+ to a dose of 3Â ÃÂ 1015Â ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on BF2+, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
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Authors
C.H. Yu, P.H. Yeh, L.J. Chen,