| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817741 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
The stability of nickel germanosilicide formed on Ni thin films on Si0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1âxGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si1âxGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1âxGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.
Related Topics
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Authors
J.H. He, W.W. Wu, L.J. Chen,