| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817749 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
Thermal stability of titanium and cobalt silicides were enhanced by implementing nitrogen or argon implantation prior to silicide formation. Silicide formed on N2 or Ar implanted blanket wafers, P-type, or N-type poly-silicon had better thermal stability as compared with non-implant ones. Furthermore, Ar implanted approach demonstrated superior thermal stability characteristics even in a RTP test of 1000 °C/180 s. With the aid of N2 or Ar implantation, the grain growth of the silicide under high temperature was suppressed and thus it prohibited further diffusion and redistribution of the metal.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Tuung Luoh, Maggie Liou, Hung-Wei Liu, Chin-Ta Su, Yung-Tai Hung, Ling-Wuu Yang, Chi-Tung Huang, Kuang-Chao Chen, Henry Chung, Joseph Ku, Chih-Yuan Lu,