In-line implant and RTP process monitoring using the carrier illumination technique

This paper discusses use of the Carrier Illumination (CI) technique to monitor implant and RTP processes. The CI technique is used to monitor 0.13 μm technology RTP spike anneal processes on blanket wafers. The data show good correlation with the four point probe (4PP). More importantly, the non-destructive, non-contact, and small spot size nature of the CI measurement method can provide the ability to monitor in-line production patterned wafers. Another crucial implanter qualifying criterion involves the implanter's chuck/disc's tilt angle verification. This paper demonstrates use of the CI technique in the calibration of the implanter' tilt angles.