| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817781 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy peak shift was observed. To reduce the energy spread and peak shift, a FEA with less number of tips and with narrower gate diameter is necessary. The FEA could be operated about 100Â h in high vacuum.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J. Ishikawa, Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai, M. Nagao, S. Kanemaru,