Characterization of BF2+ implanted monitor for rapid thermal processor temperature calibration

The sheet resistance of BF2+ implanted diffused layers in (1 1 1) silicon wafers is very sensitive to temperature and relatively insensitive to implant dose variation. These properties have been exploited to develop a temperature calibration technique that is well suited for use with rapid thermal processor and single wafer epitaxial reactors. Characterization results of BF2+ implanted layers can be used to create a temperature monitor optimized for specific applications. This simple technique can be established in most fabrication facilities with minimal capital expense and low variable costs. Application examples are also discussed.