Decaborane implantation with the medium current implanter

A decaborane implantation system has been developed. The maximum beam current achieved at a wafer is 30 μA at 5 keV with the divergence less than 0.4°, which corresponds to the equivalent 500 eV-300 μA boron monomer implantation without an energy contamination. As-implanted secondary ion mass spectroscopy (SIMS) profile of the decaborane implanted at the equivalent energy 500 eV shows the steeper and shallower profile than that of the boron implanted. The result of Rs-Xj proves the higher activation with shallower junction depth. These advantages possibly arise from the self-amorphization layer by the decaborane implantation.