| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817795 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300Â eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650Â eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
H.C. Chen, C.M. Huang, K.F. Liao, S.W. Lee, C.H. Hsu, L.J. Chen,