Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817796 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
The specimens were characterized by field emission scanning electron microscopy, atomic force microscopy, and mechanical pull-up tests. A noticed relationship between the implanted voltage and the nanostructure of the implanted Cu was established. The effects of the implanted nanostructure related to the adhesion strength of the electroless-plated Cu film were discussed. The adhesion strength of the final electroless-plated Cu film followed with the implanted dosage of 10 Ã 1016 cmâ2 is apparently higher than that with the dosage of 5.0 Ã 1016 cmâ2 at the same accelerating voltage. The adhesion strength of the Cu films tends to decrease with the increasing accelerating voltages applied for the implantation. An excellent gap-filling capability in a 0.2 μm width (aspect ratio 7:1) via was obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Uei-Shin Chen, Wei-Jen Hsieh, Han C. Shih, Yee-Shyi Chang, Ko-Wei Weng, Da-Yung Wang,