Characterization of copper metallization for interconnect by 90°-bend electromagnetic filtered vacuum arc

Macro-particle contamination has been alleviated by electromagnetic filter; the copper ions in the fully ionized copper plasma were accelerated and deposited on the wafer with a negative pulsed bias voltage. The fully ionized copper plasma stream was highly directionally deposited on the patterned and blank wafers. Electron backscattered diffraction spectra showed the textures distribution of the grain growth. The result of this process as made, by mechanical pull-up tests, showed that substrate applied with −100 V pulsed bias can effectively enhance the adhesion strength of copper film on a-TaN layer. The roughness measured by atomic force microscope increased as the negative bias voltage applied to the substrate increased. The filling of trench/via as narrow as 0.2 μm, with an aspect ratio as high as 5, field emission scanning electron microscope images showed excellent gap-filling ability.