Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9818105 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 6 Pages |
Abstract
The effect of ambient oxygen gas on the survival probability for an excited Ga(5s) atoms to escape from a mono-crystalline GaAs (100) crystal without suffering tunneling de-excitation was investigated from measurements of photons emitted through the 5s2S1/2 â 4p2P3/2, 1/2 transition (417.20 nm, 403.3 nm lines) by Ar+ bombardment using optical spectroscopic technique. A Doppler analysis of the emitted line profile under an oxygen-free condition gave A/a = (5.2 ± 0.6) Ã 104 m/s. The transition rate for the resonant de-excitation of Ga(5s) was estimated as R â¼Â 1.8 Ã 1013 sâ1 at atom-surface distance of 2 Ã 10â10 m. The experimental result obtained was discussed in connection with the light-intensity dependence of the 417.2 nm spectral line on the distances from the target surface. The experimental result on the ambient oxygen gas effect was also discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Seiji Tsurubuchi, Tomoaki Nimura,