Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9818129 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
Low-temperature epitaxial growth of wurtzite-type thin films of ZnO and AlN was examined by laser molecular beam epitaxy (laser MBE), and the surface structure of these films was analyzed by in situ coaxial impact-collision ion scattering spectroscopy (CAICISS). We have achieved room-temperature (â¼20 °C) epitaxial growths of ZnO films on NiO- or AlN-buffered sapphire(0 0 0 1) substrates as well as AlN films on TiN-buffered sapphire(0 0 0 1) substrates, while the ZnO films or AlN films were grown in the polycrystalline or amorphous phase on sapphire(0 0 0 1) without any buffer layers at room temperature. From in situ CAICISS measurements, the deposited ZnO films were found to have +c polarity, that is, Zn-plane termination on the NiO- or AlN-buffered sapphire at room temperature. These room-temperature epitaxially grown films had the ultra-smooth surface, exhibiting atomic steps derived from the substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Atsushi Sasaki, Wakana Hara, Akifumi Matsuda, Shusaku Akiba, Norihiro Tateda, Mamoru Yoshimoto,