Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9818134 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
Cu precipitates were formed on Si(1Â 0Â 0) by 200Â keV Cu ion implantation and subsequent annealing at 773Â K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time, and this shape evolution seemed to result from the epitaxial formation of Cu precipitates. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1Â h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Akinori Takeyama, Shunya Yamamoto, Hiroshi Ito, Masahito Yoshikawa,