Control of point defects and grain boundaries in advanced materials

Nickel diffusion in non-doped and Li-doped polycrystalline ZnO was studied to investigate the dominant lattice defect introduced by the reaction of incorporated Li. Li-doped ZnO exhibited new emission at 393 nm. Li doping increased the Ni lattice diffusion coefficients in ZnO, but its effect on Ni grain boundary diffusion was very small. These results can be understood as Li incorporation in the ZnO lattice.