Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9818217 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Mistry, I. Gomez-Morilla, G.W. Grime, R. Webb, C. Jeynes, R. Gwilliam, A. Cansell, M. Merchant, K.J. Kirkby,