| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9818228 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 6 Pages |
Abstract
Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5Â MeV H beam in the temperature range of 120-380Â K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley-Ramo-Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.
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Authors
E. Vittone, V. Rigato, P. Olivero, F. Nava, C. Manfredotti, A. LoGiudice, Y. Garino, F. Fizzotti,