Radiation damage induced by 5Â keV Si+ ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si+) in both strained-Si/Si0.8Ge0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 1013 to 1 × 1015 ions/cm2. Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 1014 to 4 × 1014 ions/cm2 while the amorphous width is almost the same in both strained and normal Si.