Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9818286 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 6 Pages |
Abstract
We study the atomic mixing at metal (Bi or Au)/oxide (SiO2 or Al2O3) interfaces under 150-200Â MeV heavy ion irradiation. Irradiation-induced interface mixing state is examined by means of Rutherford backscattering spectrometry (RBS). For Bi/Al2O3 interfaces, the heavy ion irradiations induce a strong atomic mixing and the amount of the mixing increases with increasing the electronic stopping power for heavy ions. By comparing the results with that for 3Â MeV Si ion irradiation, we conclude that the strong atomic mixing observed at Bi/Al2O3 interfaces is attributed to the high-density electronic excitation. On the other hand, for other interfaces (Bi/SiO2, Au/Al2O3 and Au/SiO2), atomic mixing is rarely observed after the irradiation. The dependence of atomic mixing on combinations of irradiating ions and interface-forming materials is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R. Nakatani, R. Taniguchi, Y. Chimi, N. Ishikawa, M. Fukuzumi, Y. Kato, H. Tsuchida, N. Matsunami, A. Iwase,