| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9818336 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 6 Pages |
Abstract
The dynamics of ripple topography on silicon surfaces generated by oxygen ion bombardment with increasing fluences have been investigated by atomic force microscopy (AFM). At the early stages of sputtering, periodic ripples with the wave vector parallel to ion beam direction are developed. At the late stages of sputtering, the ripple structure tends to break down and the surface becomes faceted. The growth rate of the ripples and the scaling exponents of the faceted surface have been determined. The results are discussed with reference to the Bradley-Harper theory and its nonlinear extension. Finally, the ripple wavelength is found to be a linear function of the bombarding energy.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Karmakar, D. Ghose,