| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9818352 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
Transmission electron microscopy (TEM) and ion beam techniques were used to study the DC reactively sputtered In2O3 films on Si substrates. TEM studies showed that the films are single-phase and polycrystalline. Particle induced X-ray emission (PIXE) enabled trace analysis of the films. Rutherford backscattering spectrometry (RBS) investigations suggested the formation of 20Â nm thick inhomogeneous interface region between In2O3 film and Si. Secondary ion mass spectrometry (SIMS) depth profiling and current-voltage measurements confirmed the presence of the interface region.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Malar, V. Vijayan, A.K. Tyagi, S. Kasiviswanathan,