| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9818410 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
Computer simulation allows to study dopant distribution changes during NTD process and post-irradiation annealing and to determine appropriate annealing regimes. The initial distribution of the radiation defects was obtained by the dynamic Monte Carlo code DYTRIRS_N, while the subsequent annealing stage was simulated by the rate equations (RE) method. Concentrations of intrinsic defects and depth profiles of phosphorus atoms were obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D.V. Kulikov, V.S. Kharlamov, A.A. Schmidt, K.L. Safonov, S.A. Korolev, Yu.V. Trushin,