Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon

We use coupled binary collision (BC) and kinetic lattice Monte Carlo (kLMC) simulations to investigate the temperature dependence of implantation damage around room temperature and below, and the difference between dynamic annealing during the implant and post-implant annealing. Based on our simulations we give a physical explanation of this difference. From comparison with published experimental data on 200 keV B implants in Si we conclude that interaction radii or reaction barriers exist that favor recombination over clustering reactions. Moreover, we discuss the point defect parameters required to achieve agreement between simulation and experimental results.