Multiscale approach for the analysis of channeling profile measurements of ion implantation damage

Coupled binary collision and kinetic lattice Monte Carlo simulations are used to analyze 30 keV B channeling profile measurements of damage from 30 keV N implants in (1 1 0)-Si. Collision cascades are generated in the binary collision approach, while dynamic annealing and post-implant annealing at room temperature are treated within the kinetic lattice Monte Carlo approach. In the binary collision simulations the atom positions of each defect and the lattice strain around the defects are considered. Strain is shown to have a weak but non-negligible effect on the channeling of 30 keV B. Comparison of the simulation results with the B profiles measured by SIMS suggests that interstitials and vacancies are attracted by clusters of the opposite type and/or repelled by clusters of the same type.