Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9821506 | Vacuum | 2005 | 4 Pages |
Abstract
O2 adsorbs dissociatively on Mo2C/Mo(1Â 0Â 0) at room temperature. Oxidation of the carbide at 800Â K results in the partial removal of carbon and leads to sub-surface O migration, accompanied by the appearance of highly oxidized Mo states. Raising the O2 adsorption temperature to 900Â K decreased the carbon content further, without affecting the amount and the distribution of adsorbed O. Performing the oxidation at 1000Â K led to an even more effective removal of carbon, but the oxygen content of the surface region was also reduced.
Related Topics
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Materials Science
Surfaces, Coatings and Films
Authors
László Ãvári, János Kiss,