| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9821586 | Vacuum | 2005 | 5 Pages |
Abstract
Two approaches for manufacturing of p-type resistive paths in silicon by ion implantation have been compared. Namely, B+ (doping ion) implantation and F+ (amorphizing ion) combined with B+ implantation processes with further sequential 600 °C(3 h)/800 °C(1 h)/1000 °C(2 h)-1100 °C(2 h) furnace annealing have been used for fabrication of the piezoresistors, conductive paths and p-n junctions. Electrical properties of these elements have been determined.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B. Jaroszewicz, K. Domanski, D. Tomaszewski, P. Janus, A. Kudla, B. Latecki, A. Kociubinski, M. Nikodem, J. Katcki, M. Wzorek, J. Marczewski, P. Grabiec,