Radiation damage of Si wafers modified by means of thin layer ion assisted deposition

Development of the damage and structure of metal-based-film-Si structures' constructions formed by ion-beam-assisted deposition (IBAD) of thin films onto silicon, using a method in which the metal deposition is accompanied by bombardment by the same metal ions, is considered. The analysis was carried out using the RBS/channeling and TEM methods. The films are found to have uniform thickness, they are amorphous in the interface region and include low scale (∼5-10 nm) inserts of metal. It is estimated that concentration of silicon atoms displaced during the IBAD process in the interface region decreases 1.7-3.7 times when a thin layer on the silicon wafer is deposited by physical evaporation before the IBAD process.