| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9821638 | Vacuum | 2005 | 7 Pages |
Abstract
The comparative studies of similarly implanted Ge crystals did not exhibit the saturation of implantation induced strain. The amorphization of Ge crystals took place for relatively small dose of 6Ã1013cm-2. This difference is most probably caused by increased mobility of point defects observed close to 300Â K.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Wojciech Wierzchowski, Krzysztof Wieteska, Walter Graeff, Andrzej Turos, Reiner Grötzschel,