Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9821647 | Vacuum | 2005 | 4 Pages |
Abstract
In this paper we have reconstructed and characterized the damage profile induced by helium implantation in silicon by making direct measurements of the lifetime profile made on specially fabricated test devices. Results show that the shape of the defect profile differs from that predicted by Monte Carlo simulations. Also, a considerable increase in the resistivity of the layer, not expected with He implantation, has been found. Finally, energy levels affecting the recombination of minority carriers have been given.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
L. Bellemo, R. Carta, S. Daliento, L. Gialanella, B.N. Limata, L. Mele, M. Romano, A. Sanseverino, P. Spirito,