Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9828931 | Infrared Physics & Technology | 2005 | 4 Pages |
Abstract
We report the fabrication and characteristics of large format (640Â ÃÂ 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1Â ÃÂ 107 electrons, yielded a mean noise equivalent temperature difference (NETD) of â¼40Â mK at a cold finger temperature as high as 77Â K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
S. Ozer, O.O. Cellek, C. Besikci,