| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9828936 | Infrared Physics & Technology | 2005 | 5 Pages |
Abstract
We developed a Monte-Carlo simulation to calculate the characteristics of QDIP devices. To implement QDs into our Monte-Carlo simulation, QDs are expressed as a sort of “scattering centers”. Infrared absorption is implemented by the change of the electron emission probability out of the QD, describing the increased emission due to absorption. Using our Monte-Carlo simulation, we found that the result qualitatively agrees with other theoretical work.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Y. Matsukura, Y. Uchiyama, R. Suzuki, T. Fujii, N. Kajihara,