Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829296 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
Thin films of TiO2 have been deposited onto MgO(0 0 1) substrates using atomic layer deposition at 300 °C. Plan and cross-sectional transmission electron microscopy (TEM), X-ray diffraction and atomic force microscopy have been used to understand the nature of the films. X-ray and electron diffraction showed that a polycrystalline, epitaxial anatase film was produced. The c-axis of the anatase was parallel to the MgO(0 0 1) surface with two orientational variants at right angles to each other in the plane of the film, each aligned with an MgO cube axis. Plan-view and cross-sectional TEM showed that the grain structure of the film reflected this orientation relationship, with the grain morphology comprising two sets of roughly tetragonal grains. Also present was a small fraction of equiaxed, anatase grains which were randomly oriented. Roughness measurement using atomic force microscopy showed that the epitaxial anatase films were quite smooth, in comparison to equivalent non-aligned films grown on silicon.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
D.R.G. Mitchell, D.J. Attard, G. Triani,