Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829304 | Journal of Crystal Growth | 2005 | 11 Pages |
Abstract
To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi2 epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi2 films on Si (1 1 1).
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
S.Y. Ji, G.M. Lalev, J.F. Wang, J.W. Lim, J.H. Yoo, D. Shindo, M. Isshiki,