Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829346 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
High-quality epitaxial CdTe layers were grown on Si(2 1 1) substrates in a metalorganic vapor-phase epitaxy. In order to obtain homo-orientation growth on Si substrates, pre-treatment of the substrates was carried out in a separate chamber by annealing them together with pieces of GaAs at 800-900 °C in a hydrogen environment. Grown epilayers had very good substrate adhesion. The full-width at half-maximum value of the X-ray double crystal rocking curve from the CdTe(4 2 2) plane decreased rapidly with increasing layer thickness, and remained between 140-200 arcsec for layers thicker than 18 μm. Photoluminescence measurement at 4.2 K showed high-intensity bound excitonic emission and very small defect-related deep emissions indicating the high crystalline quality of the grown layers.
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Authors
M. Niraula, K. Yasuda, H. Ohnishi, K. Eguchi, H. Takahashi, K. Noda, Y. Agata,