| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829362 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Na0.5Bi0.5TiO3 thin films have been grown on p-type Si(1Â 1Â 1) and Pt/Ti/SiO2/Si substrates by a method of chemical solution decomposition. The structure and microscopy were studied by X-ray diffraction and atomic force microscopy, respectively. The electrical measurements were conducted on metal-ferroelectric-semiconductor or metal-ferroelectric-metal capacitors. The films show low leakage current. They also exhibit good ferroelectric and dielectric properties.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.H. Yang, Z. Wang, Q.X. Li, J.H. Wang, Y.G. Yang, S.L. Gu, D.M. Yang, J.R. Han,