Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829365 | Journal of Crystal Growth | 2005 | 10 Pages |
Abstract
The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0Â 0Â 0Â 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Maria Losurdo, Giovanni Bruno, T.H. Kim, Soojeong Choi, April Brown, Akihiro Moto,