Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829391 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure show images of dislocations and stacking faults. Three types of dislocations are identified and their Burgers vectors are determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations are found to be edge dislocations and their Burgers vector is ã110ã. Also mixed dislocations are found. The overall dislocation density is about 2000cm-2. Large stacking faults are limited by long straight dislocations, the Burgers vector of which is ã110ã. Only a few threading dislocations are observed in the epitaxial layer grown by vapour-phase epitaxy. Their density is about 500cm-2. Small circular dots found are interpreted as indium-rich inclusions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Lankinen, T. Tuomi, J. Riikonen, L. Knuuttila, H. Lipsanen, M. Sopanen, A. Danilewsky, P.J. McNally, L. O'Reilly, Y. Zhilyaev, L. Fedorov, H. Sipilä, S. Vaijärvi, R. Simon, D. Lumb, A. Owens,