Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829400 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Various effects of annealing on the optical and structural properties of sputtered ZnO layers have been investigated. ZnO layers were sputtered on Si (1 1 1) substrates and annealed at 700-900 °C under H2O atmosphere. Optical and structural properties along with surface morphologies were estimated by using photoluminescence (PL), X-ray diffraction (XRD), and atomic force microscopy (AFM), respectively. Improvement of crystal quality was observed up to 800 °C, however, it deteriorated at higher annealing temperature due to the enhanced interdiffusion of ZnO layer and Si substrate. Transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) were used to characterize the microstructure of ZnO layers. An amorphous interfacial layer is found owing to strong interdiffusion at the interface, and the reduction of the layer thickness as a result of interdiffusion is observed, which is responsible for the degradation of ZnO layer.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Mina Jung, Juyoung Lee, Seungwhan Park, Hongseung Kim, Jiho Chang,