| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829430 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
We discuss the development and optimization of lateral composition modulation in GaAsSb multilayer structures. Multilayers of this material system must be grown in strain balance with respect to the substrate in order to maintain regular composition modulation. By adjusting the thickness of each layer within the multilayer structure, the formation of lateral composition modulation can be optimized. Reducing the thickness of individual layers to 1.5Â ML results in robust lateral composition modulation. However, upon further reduction to 1Â ML, film quality degrades as anion exchange acts to cause intermixing.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Dorin, J. Mirecki Millunchick, Chris Pearson, C. Wauchope,