| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829437 | Journal of Crystal Growth | 2005 | 9 Pages |
Abstract
The ratio between N and Ga polarity in the deposited GaN layers can be adjusted by means of changing the annealing time in TMG atmosphere of the sapphire substrate. For an annealing time of 20Â min the layers are completely N-polar and for a time of 60Â min Ga polar epilayer are grown.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.P. Grzegorczyk, P.R. Hageman, J.L. Weyher, P.K. Larsen,