Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829451 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
p-Type ZnO thin films have been realized via monodoping of Li acceptor by adopting DC reactive magnetron sputtering. The lowest room-temperature resistivity was found to be 17.6 Ω cm with a Hall mobility of 3.47 cm2 V-1 s-1 and carrier concentration of 1.01Ã1017 cmâ3 for Li-doped p-type ZnO film deposited on glass substrate. The Li-doped ZnO film possessed a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. Moreover, the effects of Li content on the crystallinity, electrical and optical properties of p-type ZnO films were discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yu-Jia Zeng, Zhi-Zhen Ye, Wei-Zhong Xu, Lan-Lan Chen, Dan-Ying Li, Li-Ping Zhu, Bing-Hui Zhao, Ying-Lin Hu,