Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829463 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
We report on the fabrication of indium nitride (InN) thin films on silicon (1 0 0) substrates by radio frequency ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The effects of nitrogen ion energy on the structural properties of InN films have been investigated by X-ray diffraction and Raman spectroscopy. The InN films exhibit polycrystalline wurtzite structure. At nitrogen ion energy of 100 eV, the film shows preferred (0 0 0 2) orientation. The preferred orientation is changed to (101¯1) when the nitrogen ion energy is more than 100 eV. Three Raman-active optical phonons have been clearly identified and assigned to A1(LO) at â¼588 cmâ1, E22 at â¼490 cmâ1 and A1(TO) at â¼449 cmâ1 of InN films, which confirmed the hexagonal structure of InN.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.H. Ji, S.P. Lau,