Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829484 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
CuInS2 thin films were deposited on glass substrates by an ion layer gas reaction technique and heat-treated at various temperatures and time. Characterization of the films was carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectrum (XPS), optical absorption and by Hall Effect measurements. The experiments show that post-heat treatment has an important influence on the composition, structural and physical properties of the ILGAR thin films. The complete formation of the chalcopyrite structure CuInS2 with the (1 1 2) preferred orientation occurs under 550 °C in 1 h. The film exhibits a quite smooth, dense and uniform topography and covers the glass substrate well. The direct band gap increases from 1.3 to 1.37 eV whilst the resistivity decreases from 102 to101 Ω cm with an increase of the annealing temperature from 250 to 550 °C, which demonstrates an improvement of the crystallinity.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jijun Qiu, Zhengguo Jin, Jinwen Qian, Yong Shi, Weibing Wu,