Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829496 | Journal of Crystal Growth | 2005 | 10 Pages |
Abstract
We present a simple approach that could help quantitative phase field simulation for dilute-alloy solidification. The proposed approach mends the solute trapping problem by using a simple interface model (SIM), which requires only one free parameter. To test the feasibility of this model, a free dendritic growth from a small nucleus is simulated, and a good agreement with the anti-trapping current (ATC) model [Karma, Phys. Rev. Lett. 87 (2001) 115701] is obtained. By further studying the solute trapping effect during directional solidification, we find that the results give, with this model, a good thermodynamic consistence without solute trapping over two-order increment of the solidification speed and the interface thickness. Good agreement with the classical theory is obtained as well.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.J. Shih, M.H. Lee, C.W. Lan,