| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829525 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
We have successfully grown self-assembled InxGa1âxAs (x=0.44, 0.47, 0.50) quantum dots (QDs) with high density (>1011/cm2) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.K Yu, B. Xu, Z.G. Wang, P. Jin, C. Zhao, W. Lei, J. Sun, K. Li, L.J. Hu, L.Y. Liang,