Investigation of solid reaction between Fe and Si0.8Ge0.2

Experimental investigation into the properties of the semiconductor, Fe(Si1−zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1−zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1−zGez) to form the agglomerated Ge-rich Si1−yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si1−zGez)2 was actually blocked by the presence of Ge in Fe(Si1−zGez).