Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829544 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
We have investigated the photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures with all the other fluxes kept constant. The best optical properties are achieved when the V/III beam equivalent pressure ratio (V/IIIBEP) is equal to 10. The emission wavelength remains unchanged for the V/IIIBEP ratios between 8 and 12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For V/IIIBEP<8, incorporation of nitrogen into the crystal is enhanced and for V/IIIBEP>12 incorporation is reduced. Post-growth thermal annealing induces a spectral blue-shift, which decreases as the V/IIIBEP ratio is increased above 12. This phenomenon is likely due to combined effects of Ga/In interdiffusion and a change in the nearest neighbourhood of nitrogen.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E.-M. Pavelescu, T. Hakkarainen, V.D.S. Dhaka, N.V. Tkachenko, T. Jouhti, H. Lemmetyinen, M. Pessa,