| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829553 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
In this study, we have investigated the correlation between nickel and ultraviolet emission in SiOx (x<2) films. Due to the presence of nickel, the maximum intensity of UV emission was obtained after annealing at 800 °C, which was explained by the formation of oxygen excess defects in the oxireduction reaction between Ni and SiOx. The intensity of ultraviolet emission increases by annealing in oxygen because the process of oxidation is benefit to the formation of oxygen excess defects. The mean size of SiO2 clusters increases with the increase of annealing temperature, which is characterized by scanning electron microscopy and energy dispersive spectroscopy analysis. An oxireduction reaction model was proposed to explain the correlation between nickel and ultraviolet emission in this system.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. He, J.Y. Feng, Q.L. Wu,